SI7415DN-T1-GE3 Datasheet, PDF (1/11 Pages) Vishay Siliconix – P-Channel 60-V (D-S) MOSFET

P-Channel 60-V (D-S) MOSFET
Si7415DN
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
- 60
R_DS(on) (Ω)
0.065 at V_GS = - 10 V
0.110 at V_GS = - 4.5 V
I_D (A)
- 5.7
- 4.4
PowerPAK 1212-8
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFET
• Fast Switching
APPLICATIONS
• Load Switches
• Half-Bridge Motor Drives
• High Voltage Non-Synchronous Buck Converters
3.30 mm
S
1
S
3.30 mm
2
S
3
G
4
D
8
D
7
D
6
D
5
Bottom View
Ordering Information: Si7415DN-T1-E3 (Lead (Pb)-free)
Si7415DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 60
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current
T_A = 25 °C
T_A = 70 °C
I_D
- 5.7
- 4.6
- 3.6
- 2.9
A
I_DM
- 30
Continuous Source Current (Diode Conduction)^a
I_S
- 3.2
- 1.3
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
3.8
1.5
2.0
0.8
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{b, c}
T_J, T_stg
- 55 to 150
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient^a
t ≤ 10 s
Steady State
R_thJA
26
65
33
81
°C/W
Maximum Junction-to-Case (Drain)
Steady State
R_thJC
1.9
2.4
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71691
S-83043-Rev. E, 22-Dec-08
www.vishay.com
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