SI7402DN Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 12-V (D-S) MOSFET

Si7402DN
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.3
0.2
I_D = 250 mA
0.1
Single Pulse Power, Junction-to-Ambient
50
40
−0.0
30
−0.1
−0.2
20
−0.3
10
−0.4
−0.5
−50 −25
0 25 50 75 100 125 150
T_J − Temperature (_C)
0
0.01
0.1
1
10
Time (sec)
100
1000
1000
100
10
1
0.1
Safe Operating Area
Limited
by r_DS(on)
T_A = 25_C
Single Pulse
100 ms, 10 ms
1 ms
10 ms
100 ms
1s
10 s
dc, 100 s
0.01
0.1
1
10
100
V_DS − Drain-to-Source Voltage (V)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^−4
Single Pulse
10^−3
10^−2
10^−1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 65_C/W
3. T_JM − T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 72646
S-32522—Rev. A, 08-Dec-03