SI7402DN Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel 12-V (D-S) MOSFET

New Product
Si7402DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.015
0.012
On-Resistance vs. Drain Current
4000
3500
3000
Capacitance
C_iss
0.009
V_GS = 1.8 V
0.006
0.003
V_GS = 2.5 V
V_GS = 4.5 V
2500
2000
1500
1000
C_rss
500
C_oss
0.000
0
10
20
30
40
50
I_D − Drain Current (A)
0
0
2
4
6
8
10
12
V_DS − Drain-to-Source Voltage (V)
Gate Charge
5
V_DS = 6 V
4
I_D = 20 A
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
1.4
I_D = 20 A
3
1.2
2
1.0
1
0.8
0
0 5 10 15 20 25 30 35 40
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
T_J = 150_C
10
T_J = 25_C
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.010
0.008
0.006
I_D = 15 A
0.004
0.002
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD − Source-to-Drain Voltage (V)
Document Number: 72646
S-32522—Rev. A, 08-Dec-03
0.000
0
1
2
3
4
5
6
V_GS − Gate-to-Source Voltage (V)
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