SI7402DN Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 12-V (D-S) MOSFET

New Product
N-Channel 12-V (D-S) MOSFET
Si7402DN
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.0057 @ V_GS = 4.5 V
12
0.0067 @ V_GS = 2.5 V
0.0085 @ V_GS = 1.8 V
I_D (A)
20
18.8
16.5
PowerPAK 1212-8
3.30 mm
D
8
D
7
D
6
D
5
S
1
S
3.30 mm
2
S
3
G
4
Bottom View
Ordering Information: Si7402DN-T1
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr
Package with Low 1.07-mm Profile
APPLICATIONS
D PA Switch, Load Switch and Battery Switch
for Portable Devices
D Point-of-Load for 5-V or 3.3-V BUS Stepdown
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
12
"8
20
13
16
10
50
3.2
1.3
3.8
1.5
2.4
1.0
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case (Drain)
t v 10 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72646
S-32522—Rev. A, 08-Dec-03
Symbol
R_thJA
R_thJC
Typical
24
65
1.9
Maximum
33
81
2.4
Unit
_C/W
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