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SI7392DP Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel Reduced Qg, Fast Switching WFET
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Si7392DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
200
Single Pulse Power
0.4
160
0.2
ID = 250 mA
120
−0.0
−0.2
80
−0.4
40
−0.6
−0.8
−50 −25
0 25 50 75 100 125 150
TJ − Temperature (_C)
0
10−3
10−2
10−1
1
10
Time (sec)
Safe Operating Area, Junction-to-Case
100
Limited by
rDS(on)
10
1 ms
1
0.1
0.01
0.1
TC = 25_C
Single Pulse
10 ms
100 ms
1s
10 s
dc
1
10
100
VDS − Drain-to-Source Voltage (V)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10−4
Single Pulse
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 125_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 72165
S-41427—Rev. D, 26-Jul-04
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