SI7392DP Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel Reduced Qg, Fast Switching WFET

Si7392DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.030
On-Resistance vs. Drain Current
1800
0.024
0.018
0.012
0.006
V_GS = 4.5 V
V_GS = 10 V
1500
1200
900
600
300
C_rss
Capacitance
C_iss
C_oss
0.000
0
10
20
30
40
50
I_D − Drain Current (A)
Gate Charge
6
V_DS = 15 V
5
I_D = 15 A
0
0
6
12
18
24
30
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
V_GS = 10 V
1.6
I_D = 15 A
4
1.4
3
1.2
2
1.0
1
0.8
0
0
3
6
9
12
15
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.040
T_J = 150_C
10
0.032
0.024
I_D = 15 A
1
0.016
T_J = 25_C
0.008
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD − Source-to-Drain Voltage (V)
Document Number: 72165
S-41427—Rev. D, 26-Jul-04
0.000
0
2
4
6
8
10
V_GS − Gate-to-Source Voltage (V)
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