SI7392DP Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel Reduced Qg, Fast Switching WFET

Si7392DP
Vishay Siliconix
N-Channel Reduced Q_g, Fast Switching WFETr
PRODUCT SUMMARY
V_DS (V)
30
r_DS(on) (W)
0.00975 @ V_GS = 10 V
0.01375 @ V_GS = 4.5 V
I_D (A)
15
13
PowerPAK SO-8
6.15 mm
D
8
D
7
D
6
D
5
S
1
S
5.15 mm
2
S
3
G
4
Bottom View
Ordering Information: Si7392DP-T1
FEATURES
D Extremely Low Q_gd WFET Technology for
Low Switching Losses
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr
Package with Low 1.07-mm Profile
D 100% R_g Tested
APPLICATIONS
D High-Side DC/DC Conversion
− Notebook
− Server
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
"20
15
9
12
7
"50
4.1
1.5
5
1.8
3.2
1.1
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)^a
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72165
S-41427—Rev. D, 26-Jul-04
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJC
Typical
20
53
3.5
Maximum
25
70
4.5
Unit
_C/W
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