SI733ADP Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si7336ADP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
200
0.2
I_D = 250 mA
160
−0.0
120
−0.2
Single Pulse Power
−0.4
80
−0.6
−0.8
40
−1.0
−50 −25
0 25 50 75 100 125 150
T_J − Temperature (_C)
0
0.001
0.01
0.1
1
10
Time (sec)
Safe Operating Area, Junction-to-Case
100
*Limited by r_DS(on)
10
1 ms
10 ms
1
0.1
T_C = 25_C
Single Pulse
100 ms
1s
10 s
dc
2
1
Duty Cycle = 0.5
0.01
0.1001
0.1
1
10
100
V_DS − Drain-to-Source Voltage (V)
*V_GS u minimum V_GS at which r_DS(on) is specified
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^−4
Single Pulse
10^−3
10^−2
10^−1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 50_C/W
3. T_JM − T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 73152
S-41958—Rev. A, 25-Oct-04