SI733ADP Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

New Product
Si7336ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.005
On-Resistance vs. Drain Current
7000
0.004
0.003
0.002
0.001
V_GS = 4.5 V
V_GS = 10 V
6000
5000
4000
3000
2000
1000
C_rss
Capacitance
C_iss
C_oss
0.000
0
10
20
30
40
50
I_D − Drain Current (A)
0
0
6
12
18
24
30
V_DS − Drain-to-Source Voltage (V)
Gate Charge
6
5
V_DS = 15 V
I_D = 20 A
4
3
2
1
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
1.4
I_D = 25 A
1.2
1.0
0.8
0
0 5 10 15 20 25 30 35 40 45
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.015
10
T_J = 150_C
0.012
0.009
I_D = 25 A
1
T_J = 25_C
0.006
0.003
0.1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V_SD − Source-to-Drain Voltage (V)
Document Number: 73152
S-41958—Rev. A, 25-Oct-04
0.000
0
2
4
6
8
10
V_GS − Gate-to-Source Voltage (V)
www.vishay.com
3