SI733ADP Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

New Product
Si7336ADP
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
30
0.0030 @ V_GS = 10 V
0.0040 @ V_GS = 4.5 V
I_D (A)
30
27
Q_g (Typ)
36
PowerPAK SO-8
6.15 mm
D
8
D
7
D
6
D
5
S
1
S
5.15 mm
2
S
3
G
4
Bottom View
Ordering Information: Si7336ADP-T1
Si7336ADP-T1—E3 (Lead (Pb)-Free)
FEATURES
D Ultra-Low On-Resistance Using High Density
TrenchFETr Gen II Power MOSFET Technology
D Q_g Optimized
D New Low Thermal Resistance PowerPAKr Package
with Low 1.07-mm Profile
D 100% R_g Tested
APPLICATIONS
D Low-Side DC/DC Conversion
− Notebook
− Server
− Workstation
D Synchronous Rectifier, POL
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)^a
Avalanche Current
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
L = 1.0 mH
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
I_AS
P_D
T_J, T_stg
30
"20
30
18
25
15
70
4.5
1.8
50
5.4
1.9
3.4
1.2
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec
Steady State
Steady State
Document Number: 73152
S-41958—Rev. A, 25-Oct-04
Symbol
R_thJA
R_thJC
Typical
18
50
1.0
Maximum
23
65
1.5
Unit
_C/W
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