SI7236DP Datasheet, PDF (4/13 Pages) Vishay Siliconix – Dual N-Channel 20-V (D-S) MOSFET

Si7236DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
T_J = 150 °C
T_J = 25 °C
10
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.012
0.011
0.010
I_D = 20.7 A
0.009
0.008
0.007
125 °C
0.006
0.005
25 °C
0.004
0.003
0.002
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
1.4
50
I_D = 250 µA
1.2
40
1.0
30
0.8
20
0.6
10
0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.01
0.1
1
10
100
1000
Time (s)
Single Pulse Power (Junction-to-Ambient)
100
Limited by
R _DS(on)*
10
100 µs
1 ms
10 ms
1
T_A = 25 °C
Single Pulse
0.1
100 ms
1s
10 s
DC
BVDSS Limited
0.01
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 70359
S09-0222-Rev. B, 09-Feb-09