SI7236DP Datasheet, PDF (3/13 Pages) Vishay Siliconix – Dual N-Channel 20-V (D-S) MOSFET

Si7236DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80
10
V_GS = 5 V thru 2.5 V
8
60
6
40
2V
4
20
2
1.5 V
0
0
0.0
0.5
1.0
1.5
2.0
0.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
T_C = - 55 °C
T_C = 25 °C
T_C = 125 °C
0.5
1.0
1.5
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.0065
0.0060
0.0055
0.0050
V_GS = 2.5 V
4800
C_iss
3600
2400
0.0045
V_GS = 4.5 V
0.0040
0
20
40
60
80
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
1200
C_oss
0 ^Crss
0
5
10
15
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
10
I_D = 20 A
8
6
4
V_DS = 10 V
V_DS = 16 V
1.6
I_D = 20.7 A
1.4
1.2
1.0
4.5 V
2
0.8
0
0
20
40
60
80
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 70359
S09-0222-Rev. B, 09-Feb-09
www.vishay.com
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