SI7212DN Datasheet, PDF (4/6 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

Si7212DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
50
0.2
40
I_D = 250 mA
−0.0
30
−0.2
20
Single Pulse Power
−0.4
10
−0.6
−50 −25
0 25 50 75 100 125 150
T_J − Temperature (_C)
0
0.001 0.01
0.1
1
10
Time (sec)
Safe Operating Area, Junction-To-Ambient
100
*Limited by r_DS(on)
I_DM Limited
10
100 600
2
1
Duty Cycle = 0.5
1
I_D(on)
Limited
P(t) = 0.001
P(t) = 0.01
0.1
T_A = 25_C
Single Pulse
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
0.01
BV_DSS Limited
0.1
1
10
100
V_DS − Drain-to-Source Voltage (V)
*V_GS u minimum V_GS at which r_DS(on) is specified
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^−4
Single Pulse
10^−3
10^−2
10^−1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 77_C/W
3. T_JM − T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 73128
S-51128—Rev. B, 13-Jun-05