SI7212DN Datasheet, PDF (2/6 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

Si7212DN
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min Typ Max Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V_GS(th)
I_GSS
Zero Gate Voltage Drain Current
On-State Drain Current^a
I_DSS
I_D(on)
Drain-Source On-State Resistance^a
r_DS(on)
Forward Transconductance^a
g_fs
Diode Forward Voltage^a
V_SD
Dynamic^b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = 30 V, V_GS = 0 V
V_DS = 30 V, V_GS = 0 V, T_J = 55_C
V_DS w 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 6.8 A
V_GS = 4.5 V, I_D = 6.6 A
V_DS = 10 V, I_D = 6.8 A
I_S = 2.2 A, V_GS = 0 V
V_DS = 15 V, V_GS = 4.5 V, I_D = 6.8 A
f = 1 MHz
V_DD = 15 V, R_L = 15 W
I_D ^ 1 A, V_GEN = 10 V, R_g = 6 W
I_F = 2.2 A, di/dt = 100 A/ms
0.6
1.6
V
"100
nA
1
5
mA
20
A
0.030
0.036
W
0.032
0.039
20
S
0.8
1.2
V
7
11
2
nC
1.7
1.5
3.0
4.5
W
10
15
12
20
30
45
ns
10
15
15
30
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
V_GS = 10 thru 3 V
16
12
8
2V
4
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS − Drain-to-Source Voltage (V)
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2
Transfer Characteristics
20
16
12
8
T_C = 125_C
4
25_C
−55_C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS − Gate-to-Source Voltage (V)
Document Number: 73128
S-51128—Rev. B, 13-Jun-05