SI7212DN Datasheet, PDF (1/6 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

Si7212DN
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
30
r_DS(on) (W)
0.036 @ V_GS = 10 V
0.039 @ V_GS = 4.5 V
I_D (A)
6.8
6.6
Q_g (Typ)
7
PowerPAKr 1212-8
3.30 mm
D1
8
D1
7
D2
6
D2
5
S1
1
G1
2
3.30 mm
S2
3
G2
4
Bottom View
Ordering Information: Si7212DN-T1—E3 (Lead (Pb)-Free)
FEATURES
D TrenchFETr Gen II Power MOSFET
D 100% R_g Tested
D Space Savings Optimized for Fast
Switching
RoHS
COMPLIANT
APPLICATIONS
D Synchronous Rectification
D Intermediate Driver
D₁
D₂
G₁
G₂
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^b,c
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
"12
6.8
4.9
4.9
3.5
20
2.2
1.1
2.6
1.3
1.4
0.69
−55 to 150
260
Unit
V
A
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case (Drain)
t v 10 sec
38
Steady State
R_thJA
77
Steady State
R_thJC
4.3
48
94
_C/W
5.4
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73128
S-51128—Rev. B, 13-Jun-05
www.vishay.com
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