SI7160DP Datasheet, PDF (4/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si7160DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
150 °C
10
0.06
I_D = 15 A
0.05
0.04
1
25 °C
0.03
0.1
0.01
0.0
1
0.2
0.4
0.6
0.8
1.0
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.02
125 °C
0.01
25 °C
0.00
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
0.1
160
30 V
0.01
120
20 V
0.001
10 V
80
0.0001
40
0.00001
0
25
50
75
100 125 150
T_J - Temperature (°C)
Reverse Current (Schottky)
100
Limited by R_DS(on)*
10
1
0.1
T_C = 25 °C
Single Pulse
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1s
10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 74954
S09-0273-Rev. B, 16-Feb-09