SI7160DP Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
2.0
V_GS = 10 V thru 4 V
48
1.6
Si7160DP
Vishay Siliconix
36
3V
24
12
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.011
0.010
0.009
0.008
V_GS = 4.5 V
V_GS = 10 V
0.007
0.006
0
12
24
36
48
60
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 10 A
8
V_DS = 10 V
6
V_DS = 15 V
4
V_DS = 20 V
2
1.2
0.8
T_J = 125 °C
0.4
0.0
0.6
3600
3000
25 °C
- 55 °C
1.2
1.8
2.4
3.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
C_iss
2400
1800
1200
600
C_oss
C_rss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.7
I_D = 15 A
1.5
1.3
1.1
V_GS = 4.5 V
V_GS = 10 V
0.9
0
0
9
18
27
36
45
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 74954
S09-0273-Rev. B, 16-Feb-09
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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