SI7149DP-T1-GE3 Datasheet, PDF (4/9 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Si7149DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.05
10
T_J = 150 °C
1
0.1
T_J = 25 °C
0.04
0.03
0.02
I_D = 15 A
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.8
0.01
T_J = 125 °C
T_J = 25 °C
0.00
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
0.6
0.4
0.2
0.0
- 0.2
160
I_D = 250 µA
120
I_D = 1 mA
80
40
- 0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
1
100 ms
1s
10 s
0.1
T_A = 25 °C
Single Pulse
DC
BVDSS Limited
0.01
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
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4
Document Number: 68934
S-82620-Rev. A, 03-Nov-08