SI7149DP-T1-GE3 Datasheet, PDF (3/9 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70
5
V_GS = 10 thru 5 V
56
4
V_GS = 4 V
42
3
Si7149DP
Vishay Siliconix
28
14
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.015
2
1
0
0
7000
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.012
0.009
V_GS = 4.5 V
5600
C_iss
4200
0.006
0.003
V_GS = 10 V
0.000
0
14
28
42
56
70
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 10 A
8
V_DS = 15 V
6
V_DS = 10 V
V_DS = 20 V
4
2
2800
1400
C_oss
C_rss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 10 A
1.5
V_GS = 10 V
1.2
V_GS = 4.5 V
0.9
0
0
21
42
63
84
105
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 68934
S-82620-Rev. A, 03-Nov-08
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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