SI7149DP-T1-GE3 Datasheet, PDF (2/9 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Si7149DP
Vishay Siliconix
New Product
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Dynamic^b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V_DS
ΔV_DS/T_J
ΔV_GS(th)/T_J
V_GS(th)
I_GSS
I_DSS
I_D(on)
R_DS(on)
g_fs
V_GS = 0 V, I_D = - 250 µA
I_D = - 250 µA
V_DS = V_GS, I_D = - 250 µA
V_DS = 0 V, V_GS = ± 25 V
V_DS = - 30 V, V_GS = 0 V
V_DS = - 30 V, V_GS = 0 V, T_J = 55 °C
V_DS ≥ - 10 V, V_GS = - 10 V
V_GS = - 10 V, I_D = - 15 A
V_GS = - 4.5 V, I_D = - 10 A
V_DS = - 10 V, I_D = - 15 A
C_iss
C_oss
C_rss
Q_g
V_DS = - 15 V, V_GS = 0 V, f = 1 MHz
V_DS = - 15 V, V_GS = - 10 V, I_D = - 10 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_d(on)
t_r
t_d(off)
t_f
V_DS = - 15 V, V_GS = - 4.5 V, I_D = - 10 A
f = 1 MHz
V_DD = - 15 V, R_L = 1.5 Ω
I_D ≅ - 10 A, V_GEN = - 10 V, R_g = 1 Ω
V_DD = - 15 V, R_L = 1.5 Ω
I_D ≅ - 10 A, V_GEN = - 4.5 V, R_g = 1 Ω
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
I_S
T_C = 25 °C
Pulse Diode Forward Current
I_SM
Body Diode Voltage
V_SD
I_S = - 3 A, V_GS = 0 V
Body Diode Reverse Recovery Time
t_rr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Q_rr
t_a
I_F = - 10 A, dI/dt = 100 A/µs, T_J = 25 °C
Reverse Recovery Rise Time
t_b
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
- 30
- 1.2
- 30
0.4
Typ.
Max.
Unit
- 32
6.0
0.0042
0.0075
47
- 2.5
± 100
-1
-5
0.0052
0.0094
V
mV/°C
V
nA
µA
A
Ω
S
4590
795
pF
765
98
147
51
77
nC
11.7
25
2.0
4.0
Ω
15
30
14
28
58
110
16
32
ns
79
140
135
220
52
100
36
70
- 50
A
- 70
- 0.72
- 1.2
V
49
90
ns
47
86
nC
22
ns
27
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 68934
S-82620-Rev. A, 03-Nov-08