SI7129DN-T1-GE3 Datasheet, PDF (4/13 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET

New Product
Si7129DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.04
T_J = 150 ºC
10
T_J = 25 ºC
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.4
I_D = 250 µA
2.2
2.0
1.8
1.6
1.4
1.2- _{50 - 25}
0 25 50 75 100 125 150
T_J - Temperature (ºC)
Threshold Voltage
0.03
0.02
0.01
T_J = 125 ºC
T_J = 25 ºC
0.00
0 2 4 6 8 10 12 14 16 18 20
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
0
0.01
0.1
1.0
10
100
1000
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by R_DS(on)*
100 µs
10
1
0.1
T_A = 25 ºC
Single Pulse
1 ms
10ms
100 ms
1s
10 s
DC
BVDSS Limited
0.01
0.1
1
10
10
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is Specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 68966
S10-2023-Rev. B, 06-Sep-10