SI7129DN-T1-GE3 Datasheet, PDF (3/13 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
60
1.2
V_GS = 10 V thru 5 V
Si7129DN
Vishay Siliconix
45
0.9
125 ºC
4V
30
0.6
25 ºC
15
0.3
- 55 ºC
0
0
0.030
3
6
9
12
15
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.025
0.020
VGS = 4.5 V
0.015
0.010
V_GS = 10 V
0.005
0.000
0
10
20
30
40
50
60
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
8
V_DS = 15 V, I_D = 14.4 A
6
4
V_DS = 24 V, I_D = 14.4 A
2
0.0
0
3600
1
2
3
4
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
3000
Ciss
2400
1800
1200
600
Coss
Crss
0
0
6
12
18
24
30
V_DS - Drain-Source Voltage (V)
Capacitance
1.8
I_D = 14.4 A
1.5
1.2
0.9
V_GS = 10 V
V_GS = 4.5 V
0
0
10
20
30
40
50
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (ºC)
On-Resistance vs. Junction Temperature
Document Number: 68966
S10-2023-Rev. B, 06-Sep-10
www.vishay.com
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