SI7129DN-T1-GE3 Datasheet, PDF (2/13 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET

Si7129DN
Vishay Siliconix
New Product
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{a, b}
Maximum Junction-to-Case (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 81 °C/W.
t ≤ 10 s
Steady State
Symbol
R_thJA
R_thJC
Typical
26
1.9
Maximum
33
2.4
Unit
°C/W
SPECIFICATIONS (T_J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Dynamic^b
V_DS
ΔV_DS/T_J
ΔV_GS(th)/T_J
V_GS(th)
I_GSS
I_DSS
I_D(on)
R_DS(on)
g_fs
V_GS = 0 V, I_D = - 250 µA
I_D = - 250 µA
V_DS = V_GS, I_D = - 250 µA
V_DS = 0 V, V_GS = ± 20 V
V_DS = - 30 V, V_GS = 0 V
V_DS = - 30 V, V_GS = 0 V, T_J = 55 °C
V_DS ≤ - 5 V, V_GS = - 10 V
V_GS = - 10 V, I_D = - 14.4 A
V_GS = - 4.5 V, I_D = - 11.5 A
V_DS = - 15 V, I_D = - 14.4 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C_iss
C_oss
C_rss
Q_g
V_DS = - 15 V, V_GS = 0 V, f = 1 MHz
V_DS = - 15 V, V_GS = - 10 V, I_D = - 14.4 A
Gate-Source Charge
Q_gs
V_DS = - 15 V, V_GS = - 4.5 V, I_D = - 14.4 A
Gate-Drain Charge
Q_gd
Gate Resistance
R_g
f = 1 MHz
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
t_d(on)
t_r
t_d(off)
V_DD = - 15 V, R_L = 1.5 Ω
I_D ≅ - 10 A, V_GEN = - 4.5 V, R_g = 1 Ω
Fall Time
t_f
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
t_d(on)
t_r
t_d(off)
V_DD = - 15 V, R_L = 1.5 Ω
I_D ≅ - 10 A, V_GEN = - 10 V, R_g = 1 Ω
Fall Time
t_f
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I_S
T_C = 25 °C
Pulse Diode Forward Current^a
I_SM
Body Diode Voltage
V_SD
Body Diode Reverse Recovery Time
t_rr
I_F = - 10 A
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Q_rr
t_a
I_F = - 10 A, dI/dt = 100 A/µs, T_J = 25 °C
Reverse Recovery Rise Time
t_b
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
- 30
- 1.5
- 20
0.4
Typ.
Max.
Unit
- 20
5
0.0095
0.0160
37
- 2.8
± 100
-1
- 10
0.0114
0.0200
V
mV/°C
V
nA
µA
A
Ω
S
2230
3345
385
578
pF
322
47.5
71
24.6
37
nC
7.7
12
1.8
3.6
Ω
50
75
43
65
30
45
14
21
ns
14
21
9
18
36
54
10
20
- 35^e
A
- 60
- 0.8
- 1.2
V
31
47
ns
30
45
nC
15
ns
16
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 68966
S10-2023-Rev. B, 06-Sep-10