SI7123DN Datasheet, PDF (4/13 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET

New Product
Si7123DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
T_J = 150 °C
10
T_J = 25 °C
1
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.04
I_D = - 15 A
0.03
0.02
T_A = 150 °C
0.01
T_A = 25 °C
0
1.3
2.3
3.3
4.3
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.4
50
0.3
I_D = - 250 µA
40
0.2
30
0.1
20
0.0
- 0.1
10
- 0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.01
0.1
1.0
10
100
1000
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by R_DS(on)*
10
1
0.1
10 ms
100 ms
1s
10 s
DC
0.01
T_C = 25 °C
Single Pulse
0.001
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 69655
S10-0347-Rev. D, 15-Feb-10