SI7123DN Datasheet, PDF (3/13 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET

New Product
Si7123DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80
3.0
V_GS = 5 V thru 2.5 V
2.4
60
V_GS = 2 V
1.8
40
1.2
T_J = 25 °C
20
0
0
0.04
V_GS = 1.5 V
V_GS = 1 V
1
2
3
4
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.6
0
0
T_J = 125 °C
T_J = - 55 °C
0.3
0.6
0.9
1.2
1.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
6000
0.03
V_GS = - 1.8 V
0.02
0.01
0.00
0
V_GS = - 2.5 V
V_GS = - 4.5 V
5
10
15
20
25
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current
4.0
V_DS = - 10 V, I_D = - 15 A
3.0
5000
4000
3000
2000
1000
0
0
1.4
1.3
1.2
C_iss
C_oss
C_rss
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
V_GS = - 4.5 V, I _D = - 15 A
1.1
2.0
V_DS = - 15 V, I_D = - 16 A
1.0
1.0
0.9
0.0
0
10
20
30
40
50
60
Q_g - Total Gate Charge (nC)
Gate Charge
0.8
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 69655
S10-0347-Rev. D, 15-Feb-10
www.vishay.com
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