SI7108DN Datasheet, PDF (4/6 Pages) Vishay Siliconix – N-Channel 20-V (D-S) Fast Switching MOSFET

Si7108DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
Single Pulse Power, Juncion-to-Ambient
50
0.2
I_D = 250 mA
40
–0.0
30
–0.2
20
–0.4
–0.6
10
–0.8
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0
0.01
0.1
1
10
Time (sec)
100
600
100
*Limited by r_DS(on)
Safe Operating Area
I_DM Limited
P(t) = 0.0001
2
1
Duty Cycle = 0.5
10
I_D(on)
Limited
1
0.1
T_A = 25_C
Single Pulse
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
0.01
BV_DSS Limited
0.1
1
10
100
V_DS – Drain-to-Source Voltage (V)
*V_GS u minimum V_GS at which r_DS(on) is specified
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
Single Pulse
10^–3
10^–2
10^–1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 65_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 73216
S-51413—Rev. C, 01-Aug-05