SI7108DN Datasheet, PDF (3/6 Pages) Vishay Siliconix – N-Channel 20-V (D-S) Fast Switching MOSFET

Si7108DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.008
On-Resistance vs. Drain Current
3000
Capacitance
0.007
0.006
0.005
V_GS = 4.5 V
2500
C_iss
2000
0.004
0.003
0.002
0.001
0.000
0
V_GS = 10 V
10
20
30
40
50
60
I_D – Drain Current (A)
1500
1000
500
0
0
C_rss
4
C_oss
8
12
16
20
V_DS – Drain-to-Source Voltage (V)
Gate Charge
10
V_DS = 10 V
8
I_D = 22 A
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
1.4
I_D = 22 A
6
1.2
4
1.0
2
0.8
0
0
10
20
30
40
50
Q_g – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
60
T_J = 150_C
10
T_J = 25_C
0.6
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.015
0.012
0.009
I_D = 22 A
0.006
0.003
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD – Source-to-Drain Voltage (V)
Document Number: 73216
S-51413—Rev. C, 01-Aug-05
0.000
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
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