SI7108DN Datasheet, PDF (2/6 Pages) Vishay Siliconix – N-Channel 20-V (D-S) Fast Switching MOSFET

Si7108DN
Vishay Siliconix
MOSFET SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min Typ Max Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V_GS(th)
I_GSS
Zero Gate Voltage Drain Current
On-State Drain Current^a
I_DSS
I_D(on)
Drain-Source On-State Resistance^a
r_DS(on)
Forward Transconductance^a
g_fs
Diode Forward Voltage^a
V_SD
Dynamic^b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Reverse Recovery Charge
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
Q_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "16 V
V_DS = 20 V, V_GS = 0 V
V_DS = 20 V, V_GS = 0 V, T_J = 55_C
V_DS w 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 22 A
V_GS = 4.5 V, I_D = 19.7 A
V_DS = 15 V, I_D = 22 A
I_S = 3.2 A, V_GS = 0 V
V_DS = 10 V, V_GS = 4.5 V, I_D = 22 A
f = 1 MHz
V_DD = 20 V, R_L = 20 W
I_D ^ 1 A, V_GEN = 10 V, R_g = 6 W
I_F = 3.2 A, di/dt = 100 A/ms
1
2
V
"100
nA
1
mA
5
40
A
0.0041 0.0049
W
0.005 0.0061
88
S
0.75
1.2
V
20
30
6.3
nC
4.9
0.7
1.4
2.1
W
10
15
10
15
60
130
ns
10
15
30
60
20
36
nC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
60
V_GS = 10 thru 4 V
50
Output Characteristics
3V
40
30
20
10
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_DS – Drain-to-Source Voltage (V)
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2
Transfer Characteristics
60
50
40
30
20
T_C = 125_C
10
0
0.0
25_C
–55_C
0.5
1.0
1.5
2.0
2.5
3.0
V_GS – Gate-to-Source Voltage (V)
Document Number: 73216
S-51413—Rev. C, 01-Aug-05