SI6981DQ_16 Datasheet, PDF (4/6 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

Si6981DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4
200
0.3
160
0.2
I_D = 300 µA
120
0.1
80
0.0
40
- 0.1
- 0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
Limited
10 ^{by RDS(on)*}
1 ms
2
1
Duty Cycle = 0.5
1
10 ms
0.1
T_C = 25 °C
Single Pulse
100 ms
1s
10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Case
0.2
0.1
0.1
0.05
0.02
0.01
10^-4
Single Pulse
10^-3
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 124 °C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^-2
10^-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.vishay.com
4
Document Number: 72226
S-81221-Rev. B, 02-Jun-08