SI6981DQ_16 Datasheet, PDF (3/6 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.10
2500
Si6981DQ
Vishay Siliconix
0.08
0.06
V_GS = 1.8 V
0.04
0.02
V_GS = 2.5 V
V_GS = 4.5 V
0.00
0
6
12
18
24
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current
6
V_DS = 10 V
5
I_D = 4.8 A
4
3
2
1
0
0
4
8
12
16
20
Q_g - Total Gate Charge (nC)
Gate Charge
40
T_J = 150 °C
10
1
T_J = 25 °C
2000
1500
C_iss
1000
C_oss
500
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
V_GS = 4.5 V
I_D = 4.8 A
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.10
0.08
0.06
I_D = 4.8 A
0.04
0.02
0.2
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
0
2
4
6
8
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72226
S-81221-Rev. B, 02-Jun-08
www.vishay.com
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