SI6981DQ_16 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

Dual P-Channel 20-V (D-S) MOSFET
Si6981DQ
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.031 at V_GS = - 4.5 V
- 20
0.041 at V_GS = - 2.5 V
0.058 at V_GS = - 1.8 V
I_D (A)
- 4.8
- 4.2
- 3.5
FEATURES
• Halogen-free
• TrenchFET^® Power MOSFETs
APPLICATIONS
• Load Switch
• Battery Switch
S₁
S₂
RoHS
COMPLIANT
TSSOP-8
D₁ 1
S_{1 2}
S_{1 3}
G_{1 4}
8 D2
7 ^S2
6 ^S2
5 ^G2
Top View
Ordering Information: Si6981DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
G₁
D₁
P-Channel MOSFET
G₂
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 20
V
V_GS
±8
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current (10 µs Pulse Width)
T_A = 25 °C
T_A = 70 °C
I_D
- 4.8
- 3.9
- 4.1
- 3.2
A
I_DM
- 30
Continuous Source Current (Diode Conduction)^a
I_S
- 1.0
- 0.7
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
1.14
0.83
0.73
0.53
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
86
124
59
Maximum
110
150
75
Unit
°C/W
Document Number: 72226
S-81221-Rev. B, 02-Jun-08
www.vishay.com
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