SI6925DQ Datasheet, PDF (4/4 Pages) Vishay Siliconix – Dual N-Channel 2.5-V (G-S) MOSFET

Si6925DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
30
On-Resistance vs. Gate-to-Source Voltage
0.10
T_J = 150_C
10
0.08
I_D = 3.4 A
0.06
T_J = 25_C
0.04
0.02
1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD – Source-to-Drain Voltage (V)
0
0
1
2
3
4
5
V_GS – Gate-to-Source Voltage (V)
0.22
0.14
0.06
–0.02
–0.10
–0.18
–0.26
Threshold Voltage
I_D = 250 mA
Single Pulse Power
30
25
20
15
10
5
–0.34
–50
0
50
100
150
T_J – Temperature (_C)
0
0.01
0.1
1
Time (sec)
10 30
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
Single Pulse
10^–3
10^–2
10^–1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 125_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
1
10
30
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2-4
Document Number: 70631
S-49455—Rev. A, 17-Dec-96