SI6925DQ Datasheet, PDF (3/4 Pages) Vishay Siliconix – Dual N-Channel 2.5-V (G-S) MOSFET

Si6925DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
30
V_GS = 5 thru 3 V
24
24
2.5 V
18
18
2V
12
12
Transfer Characteristics
T_C = –55_C
25_C
125_C
6
1.5 V
1V
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.10
0.08
0.06
V_GS = 2.5 V
V_GS = 3 V
0.04
0.02
V_GS = 4.5 V
0
0
4.5
6
12
18
24
30
I_D – Drain Current (A)
Gate Charge
V_DS = 10 V
3.6
I_D = 3.4 A
2.7
1.8
0.9
0
0
2
4
6
8
Q_g – Total Gate Charge (nC)
Document Number: 70631
S-49455—Rev. A, 17-Dec-96
6
0
0
1200
0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_GS – Gate-to-Source Voltage (V)
Capacitance
900
C_iss
600
300
C_oss
C_rss
0
0
4
8
12
16
20
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
1.6
V_GS = 4.5 V
I_D = 3.4 A
1.4
1.2
1.0
0.8
0.6
–50
0
50
100
150
T_J – Junction Temperature (_C)
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2-3