SI6925DQ Datasheet, PDF (1/4 Pages) Vishay Siliconix – Dual N-Channel 2.5-V (G-S) MOSFET

Si6925DQ
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.05 @ V_GS = 4.5 V
20
0.06 @ V_GS = 3.0 V
0.08 @ V_GS = 2.5 V
I_D (A)
"3.4
"3.1
"2.7
TSSOP-8
D₁ 1 _D
S_{1 2}
S_{1 3}
Si6925DQ
G_{1 4}
Top View
8 D2
7 ^S2
6 ^S2
5 ^G2
D₁
D₂
G₁
G₂
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
20
"12
"3.4
"2.7
"30
1.25
1
0.64
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient^a
R_thJA
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70631
S-49455—Rev. A, 17-Dec-96
Limit
125
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
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