SI6913DQ-T1-E3 Datasheet, PDF (4/11 Pages) Vishay Siliconix – Dual P-Channel 12 V (D-S) MOSFET

Si6913DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.4
100
0.3
80
0.2
I_D = 400 µA
60
0.1
40
0.0
20
- 0.1
- 0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on) *
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
2
1
Duty Cycle = 0.5
10
1
0.1
T_C = 25 °C
Single Pulse
1 ms
10 ms
100 ms
1s
10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Case
0.2
0.1
0.1
0.05
0.02
0.01
10 ^{- 4}
Single Pulse
10 ^{- 3}
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 124 °C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10 ^{- 2}
10 ^{- 1}
1
10
Square Wave Pulse Duration (s)
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
Document Number: 72368
For technical questions, contact: [e-mail]
www.vishay.com
S12-1359-Rev. C, 11-Jun-12
4
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000