SI6913DQ-T1-E3 Datasheet, PDF (1/11 Pages) Vishay Siliconix – Dual P-Channel 12 V (D-S) MOSFET

Dual P-Channel 12 V (D-S) MOSFET
Si6913DQ
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
0.021 at V_GS = - 4.5 V
- 12
0.028 at V_GS = - 2.5 V
0.037 at V_GS = - 1.8 V
I_D (A)
- 5.8
- 5.0
- 4.4
D₁ 1
S_{1 2}
S_{1 3}
G_{1 4}
TSSOP-8
Top View
8 D2
7 ^S2
6 ^S2
5 ^G2
Ordering Information:
Si6913DQ-T1-E3 (Lead (Pb)-free)
Si6913DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET^® Power MOSFETs
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Load Switch
• Battery Switch
S₁
S₂
G₁
G₂
D₁
P-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 12
V
V_GS
±8
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current (10 µs Pulse Width)
T_A = 25 °C
T_A = 70 °C
I_D
- 5.8
- 4.6
- 4.9
- 3.9
A
I_DM
- 30
Continuous Source Current (Diode Conduction)^a
I_S
-1
- 0.7
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
1.14
0.83
0.73
0.53
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
t  10 s
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
86
124
52
Maximum
110
150
65
Unit
°C/W
Document Number: 72368
For technical questions, contact: [e-mail]
www.vishay.com
S12-1359-Rev. C, 11-Jun-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000