SI6913DQ-T1-E3 Datasheet, PDF (3/11 Pages) Vishay Siliconix – Dual P-Channel 12 V (D-S) MOSFET

Si6913DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.10
3500
0.08
0.06
0.04
0.02
0.00
0
V_GS = 1.8 V
V_GS = 2.5 V
V_GS = 4.5 V
5
10
15
20
25
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current
3000
2500
C_iss
2000
1500
1000
500
C_rss
C_oss
0
0
2
4
6
8
10
12
V_DS - Drain-to-Source Voltage (V)
Capacitance
6
V_DS = 6 V
5
I_D = 5.8 A
4
3
2
1
1.6
V_GS = 4.5 V
I_D = 5.8 A
1.4
1.2
1.0
0.8
0
0
5
10
15
20
25
30
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
30
T_J = 150 °C
10
1
T_J = 25 °C
0.1
0.0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.08
0.07
0.06
0.05
0.04
I_D = 5.8 A
0.03
0.02
0.01
0.00
012345678
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72368
For technical questions, contact: [e-mail]
www.vishay.com
S12-1359-Rev. C, 11-Jun-12
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000