SI6874EDQ Datasheet, PDF (4/5 Pages) Vishay Siliconix – Dual N-Channel 20-V (D-S) MOSFET, Common Drain

Si6874EDQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
SourceĆDrain Diode Forward Voltage
20
OnĆResistance vs. GateĆtoĆSource Voltage
0.08
10
T_J = 150_C
0.06
I_D = 6.5 A
0.04
T_J = 25_C
0.02
1
0
0.4
0.2
0.4
0.6
0.8
1.0
1.2
V_SD – Source-to-Drain Voltage (V)
Threshold Voltage
I_D = 250 mA
–0.0
–0.2
–0.4
0
0
1
2
3
4
5
6
V_GS – Gate-to-Source Voltage (V)
Single Pulse Power, Junction-to-Ambient
32
24
16
8
–0.6
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0
10^–2
10^–1
1
10
100
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
Single Pulse
10^–3
10^–2
www.vishay.com S FaxBack 408-970-5600
4
10^–1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 86_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
Document Number: 71252
S-01753—Rev. A, 14-Aug-00