SI6874EDQ Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual N-Channel 20-V (D-S) MOSFET, Common Drain

New Product
Si6874EDQ
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET, Common Drain
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.026 @ V_GS = 4.5 V
20
0.031 @ V_GS = 2.5 V
0.039 @ V_GS = 1.8 V
I_D (A)
6.5
5.8
5.0
TSSOP-8
S₁ 1 _D
8D
G_{1 2}
Si6874EDQ
7D
G₁
S_{2 3}
6D
G_{2 4}
5D
Top View
D
2.4 kW
S₁
N-Channel
D
2.4 kW
G₂
S₂
N-Channel
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
20
"12
6.5
5.3
4.7
4.2
30
1.50
1.10
1.67
1.20
1.06
0.76
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71252
S-01753—Rev. A, 14-Aug-00
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
60
86
38
Maximum
75
105
45
Unit
_C/W
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