SI6874EDQ Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual N-Channel 20-V (D-S) MOSFET, Common Drain

New Product
Si6874EDQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
30
V_GS = 5 thru 2 V
24
24
18
18
12
12
1.5 V
6
6
Transfer Characteristics
T_C = –55_C
25_C
125_C
0
0
2
4
6
8
10
12
V_DS – Drain-to-Source Voltage (V)
OnĆResistance vs. Drain Current
0.06
0.05
0.04
0.03
0.02
V_GS = 1.8 V
V_GS = 2.5 V
V_GS = 4.5 V
0.01
0
0
6
12
18
24
30
I_D – Drain Current (A)
Gate Charge
5
V_DS = 10 V
4
I_D = 6.5 A
3
2
1
0
0
3
6
9
12
15
Q_g – Total Gate Charge (nC)
0
0
2500
0.5
1.0
1.5
2.0
2.5
V_GS – Gate-to-Source Voltage (V)
Capacitance
2000
C_iss
1500
1000
500
C_oss
C_rss
0
0
4
8
12
16
20
V_DS – Drain-to-Source Voltage (V)
OnĆResistance vs. Junction Temperature
1.8
1.6
V_GS = 4.5 V
I_D = 6.5 A
1.4
1.2
1.0
0.8
0.6
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
Document Number: 71252
S-01753—Rev. A, 14-Aug-00
www.vishay.com S FaxBack 408-970-5600
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