SI6802DQ Datasheet, PDF (4/4 Pages) Vishay Siliconix – N-Channel, Reduced Qg, Fast Switching MOSFET

Si6802DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20
On-Resistance vs. Gate-to-Source Voltage
0.30
10
T_J = 150_C
T_J = 25_C
0.24
0.18
0.12
I_D = 3.3 A
0.06
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD – Source-to-Drain Voltage (V)
Threshold Voltage
0.5
0.3
I_D = 250 mA
0.1
0
0
2
4
6
8
V_GS – Gate-to-Source Voltage (V)
Single Pulse Power
50
40
30
–0.1
20
–0.3
10
–0.5
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0
0.01
0.1
1
Time (sec)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
10 30
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
Single Pulse
10^–3
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2-4
10^–2
10^–1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 83_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
1
10
30
Document Number: 70188
S-49520—Rev. C, 18-Dec-96