SI6802DQ Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel, Reduced Qg, Fast Switching MOSFET

Si6802DQ
Vishay Siliconix
N-Channel, Reduced Q_g, Fast Switching MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.075 @ V_GS = 4.5 V
20
0.110 @ V_GS = 3.0 V
I_D (A)
"3.3
"2.7
D
TSSOP-8
D1_D
S2
S3
Si6802DQ
G4
Top View
8D
7S
6S
5D
G
*Source Pins 2, 3, 6, and 7
must be tied common.
S*
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
20
"12
"3.3
"2.6
"20
1.25
1.5
1.0
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient^a
Parameter
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70188
S-49520—Rev. C, 18-Dec-96
Symbol
R_thJA
Limit
83
Unit
_C/W
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