SI6802DQ Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel, Reduced Qg, Fast Switching MOSFET

Si6802DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
20
V_GS = 4.5, 4, 3.5, 3 V
16
16
Transfer Characteristics
T_C = –55_C
25_C
12
2.5 V
8
2V
4
1.5 V
0
0
1
2
3
4
5
6
7
8
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.30
12
125_C
8
4
0
0
1200
0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_GS – Gate-to-Source Voltage (V)
Capacitance
0.24
0.18
0.12
0.06
V_GS = 3 V
V_GS = 4.5 V
0
0
4
8
12
16
20
I_D – Drain Current (A)
5
I_D = 0.3 A
4
Gate Charge
3
V_DS = 4.5 V
6V
2
8V
1
900
600
C_iss
C_oss
300
C_rss
0
0
4
8
12
16
20
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.0
V_GS = 4.5 V
I_D = 3.3 A
1.5
1.0
0.5
0
0
1
2
3
4
5
Q_g – Total Gate Charge (nC)
Document Number: 70188
S-49520—Rev. C, 18-Dec-96
0
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
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