SI6544BDQ_08 Datasheet, PDF (4/9 Pages) Vishay Siliconix – N- and P-Channel 30-V (D-S) MOSFET

Si6544BDQ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
0.15
10
0.12
T_J = 150 °C
1
T_J = 25 °C
0.09
0.06
I_D = 4.3 A
0.03
0.1
0.0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.2
I_D = 250 µA
0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on) *
10
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
160
120
80
40
0
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
1 ms
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4
1
10 ms
0.1
T_C = 25 °C
Single Pulse
100 ms
1s
10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Case
Document Number: 72244
S-81056-Rev. B, 12-May-08