SI6544BDQ_08 Datasheet, PDF (1/9 Pages) Vishay Siliconix – N- and P-Channel 30-V (D-S) MOSFET

Si6544BDQ
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
N-Channel
30
0.032 at V_GS = 10 V
0.046 at V_GS = 4.5 V
P-Channel
- 30
0.043 at V_GS = - 10 V
0.073 at V_GS = - 4.5 V
I_D (A)
4.3
3.7
- 3.8
- 2.8
FEATURES
• Halogen-free
• TrenchFET^® Power MOSFETS
RoHS
COMPLIANT
D₁
S₂
TSSOP-8
D₁ 1
S_{1 2}
S_{1 3}
G_{1 4}
Top View
8 D2
7 ^S2
6 ^S2
5 ^G2
Ordering Information: Si6544BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
G₁
S₁
N-Channel MOSFET
G₂
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
10 s Steady State
P-Channel
Unit
10 s Steady State
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
- 30
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 70 °C
I_D
4.3
3.5
3.7
- 3.8
- 3.8
3.0
- 3.0
- 2.6
A
Pulsed Drain Current
I_DM
20
- 20
Continuous Source Current (Diode Conduction)^a
I_S
1.0
0.7
- 1.0
- 0.7
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
1.14
0.73
0.83
0.53
1.14
0.73
0.83
0.53
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t ≤ 10 s
Steady State
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
Symbol
R_thJA
R_thJF
Typical
88
120
65
Maximum
110
150
80
Unit
°C/W
Document Number: 72244
S-81056-Rev. B, 12-May-08
www.vishay.com
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