SI6544BDQ_08 Datasheet, PDF (3/9 Pages) Vishay Siliconix – N- and P-Channel 30-V (D-S) MOSFET

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
20
V_GS = 10 thru 5 V _{4 V}
16
16
Si6544BDQ
Vishay Siliconix
12
12
8
4
3V
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.080
8
T_C = 125 °C
4
25 °C
- 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1100
0.064
0.048
0.032
0.016
V_GS = 4.5 V
V_GS = 10 V
0.000
0
4
8
12
16
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
V_DS = 15 V
I_D = 4.3 A
8
880
C_iss
660
440
220
C_oss
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
V_GS = 10 V
I_D = 4.3 A
1.4
6
1.2
4
1.0
2
0.8
0
0
2
4
6
8
10
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 72244
S-81056-Rev. B, 12-May-08
www.vishay.com
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