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SI6543DQ Datasheet, PDF (4/6 Pages) Vishay Siliconix – Dual N- and P-Channel 30-V (D-S) MOSFET | |||
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Si6543DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
NÄCHANNEL
Source-Drain Diode Forward Voltage
20
TJ = 150_C
On-Resistance vs. Gate-to-Source Voltage
0.20
0.16
10
TJ = 25_C
0.12
ID = 3.9 A
0.08
0.04
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD â Source-to-Drain Voltage (V)
0
0
2
4
6
8
10
VGS â Gate-to-Source Voltage (V)
Threshold Voltage
0.4
0.2
ID = 250 µA
â0.0
â0.2
â0.4
â0.6
â0.8
â1.0
â50 â25
0 25 50 75 100 125 150
TJ â Temperature (_C)
30
25
20
15
10
5
0
0.01
Single Pulse Power
0.1
1
Time (sec)
10 30
2
1 Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1 0.05
0.02
0.01
10â4
Single Pulse
10â3
www.vishay.com S FaxBack 408-970-5600
2-4
10â2
10â1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 125_C/W
3. TJM â TA = PDMZthJA(t)
4. Surface Mounted
1
10
30
Document Number: 70181
S-49534âRev. C, 06-Oct-97
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