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SI6543DQ Datasheet, PDF (3/6 Pages) Vishay Siliconix – Dual N- and P-Channel 30-V (D-S) MOSFET
Si6543DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
20
VGS = 10 thru 6 V
5V
16
16
12
12
NĆCHANNEL
Transfer Characteristics
TC = –55_C
25_C
125_C
8
4V
4
3V
0
0
2
4
6
8
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.20
0.16
0.12
VGS = 4.5 V
8
4
0
0
2
4
6
8
VGS – Gate-to-Source Voltage (V)
Capacitance
750
600
Ciss
450
0.08
0.04
VGS = 10 V
0
0
4
8
12
16
20
ID – Drain Current (A)
Gate Charge
10
VDS = 10 V
8
ID = 3.9 A
6
4
2
300
Coss
150
0
0
Crss
5
10
15
20
25
30
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.0
VGS = 10 V
ID = 3.9 A
1.6
1.2
0.8
0
0
2
4
6
8
10
Qg – Total Gate Charge (nC)
Document Number: 70181
S-49534—Rev. C, 06-Oct-97
0.4
–50 –25 0
25 50 75 100 125 150
TJ – Junction Temperature (_C)
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