SI6543DQ Datasheet, PDF (2/6 Pages) Vishay Siliconix – Dual N- and P-Channel 30-V (D-S) MOSFET

Si6543DQ
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = 250 mA
V_DS = V_GS, I_D = –250 mA
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = "20 V
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = 30 V, V_GS = 0 V
V_DS = –30 V, V_GS = 0 V
V_DS = 30 V, V_GS = 0 V, T_J = 55_C
V_DS = –30 V, V_GS = 0 V, T_J = 55_C
V_DS w 5 V, V_GS = 10 V
V_DS w –5 V, V_GS = –10 V
V_GS = 10 V, I_D = 3.9 A
V_GS = –10 V, I_D = 2.5 A
V_GS = 4.5 V, I_D = 3.1 A
V_GS = –4.5 V, I_D = 1.8 A
V_DS = 15 V, I_D = 3.9 A
V_DS = –15 V, I_D = – 2.5 A
I_S = 1.25 A, V_GS = 0 V
I_S = –1.25 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q_g
N-Channel
V_DS = 10 V, V_GS = 10 V, I_D = 3.9 A
Q_gs
P-Channel
V_DS = –10 V, V_GS = –10 V, I_D = –2.5 A
Q_gd
Turn-On Delay Time
t_d(on)
Rise Time
t_r
Turn-Off Delay Time
t_d(off)
Fall Time
t_f
Source-Drain
Reverse Recovery Time
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
N-Channel
V_DD = 10 V, R_L = 10 W
I_D ^ 1 A, V_GEN = 10 V, R_G = 6 W
P-Channel
V_DD = –10 V, R_L = 10 W
I_D ^ –1 A, V_GEN = –10 V, R_G = 6 W
I_F = 1.25 A, di/dt = 100 A/ms
I_F = –1.25 A, di/dt = 100 A/ms
Min Typ Max Unit
N-Ch
1.0
P-Ch
–1.0
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
15
P-Ch
–15
V
"100
nA
"100
1
–1
mA
25
–25
A
N-Ch
0.043 0.065
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.066 0.085
W
0.075 0.095
0.125 0.19
7
S
5
0.8
1.2
V
0.8
–1.2
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
9.8
15
8.7
15
2.1
nC
1.9
1.6
1.3
9
15
7
15
6
18
9
18
18
27
ns
14
27
6
15
8
15
48
80
46
80
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2-2
Document Number: 70181
S-49534—Rev. C, 06-Oct-97