SI6473DQ Datasheet, PDF (4/4 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

Si6473DQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
Single Pulse Power, Junction-to-Ambient
60
50
0.2
I_D = 250 mA
40
0.0
30
20
–0.2
10
–0.4
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0
10^–2
10^–1
1
10
100
Time (sec)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
Single Pulse
10^–3
2
1
Duty Cycle = 0.5
10^–2
10^–1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 95_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^–4
10^–3
10^–2
10^–1
1
10
Square Wave Pulse Duration (sec)
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2-4
Document Number: 71164
S-01042—Rev. B, 15-May-00